IXTQ 64N25P
IXTT 64N25P
120
Fig. 7. Input Adm ittance
60
Fig. 8. Trans conductance
105
90
75
60
50
40
30
T J = -40oC
25oC
125oC
45
30
15
0
T J = 125oC
25oC
-40oC
20
10
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
15
30
45
60
75
90
105
120
135
180
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
10
I D - A mperes
Fig. 10. Gate Char ge
9
V DS = 125V
150
120
90
8
7
6
5
4
I D = 32A
I G = 10m A
60
30
0
T J = 125oC
T J = 25oC
3
2
1
0
0.4
0.6
0.8 1
V S D - V olts
1.2
1.4
0
10
20
30
Q
40 50 60 70 80
G - nanoCoulombs
90 100 110
10000
Fig. 11. Capacitance
f = 1MH z
1000
Fig. 12. For w ard-Bias
Safe Ope rating Are a
T J = 150oC
C iss
R DS(on) Lim it
T C = 25oC
100
25μs
1000
C oss
10m s
1m s
100μs
C rs s
10
DC
100
1
0
5
10
15 20 25
V D S - V olts
30
35
40
10
100
V D S - V olts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
相关PDF资料
IXTT69N30P MOSFET N-CH 300V 69A TO-268
IXTT74N20P MOSFET N-CH 200V 74A TO-268
IXTT75N10L2 MOSFET N-CH 100V 75A TO268
IXTT75N10 MOSFET N-CH 100V 75A TO-268
IXTT88N30P MOSFET N-CH 300V 88A TO-268
IXTT96N15P MOSFET N-CH 150V 96A TO-268
IXTT96N20P MOSFET N-CH 200V 96A TO-268
IXTU01N100D MOSFET N-CH 1000V 0.1A TO-251
相关代理商/技术参数
IXTT68P20T 功能描述:MOSFET TrenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT69N30P 功能描述:MOSFET 69 Amps 300V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT6N120 功能描述:MOSFET 6 Amps 1200V 2.700 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT6N150 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTT72N20 功能描述:MOSFET 72 Amps 200 V 0.033 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT74N20P 功能描述:MOSFET 74 Amps 200V 0.034 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT75N10 功能描述:MOSFET 75 Amps 100V 0.02 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT75N10L2 功能描述:MOSFET LINEAR L2 SERIES MOSFET 100V 75A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube